Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results

There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that...

Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon

Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thi...

R.F. sputtered amorphous silicon schottky Barrier solar cells

2014 The preparation of hydrogenated, r.f. sputtered a-Si films, suitable for large area solar cell arrays is discussed. Optical and electrical measurements on such materials contacted with a variety of metals are detailed. Initial experimental prototype cells, with areas up to 1 cm2 and efficiencies of around 2 %, are described. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,